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On the origin of the 1/f^1.7 noise in deep submicron partially depleted SOI transistorsLUKYANCHIKOVA, N; PETRICHUK, M; GARBAR, N et al.ESSCIRC 2002 : European solid-state circuits conferenceEuropean solid-state device research conference. 2002, pp 75-78, isbn 88-900847-8-2, 4 p.Conference Paper

Influence of HALO implantation on analog performance and comparison between bulk, partially-depleted and fully-depleted MOSFETsVANCAILLIE, L; KILCHYTSKA, V; LEVACQ, D et al.IEEE International SOI conference. 2002, pp 161-162, isbn 0-7803-7439-8, 2 p.Conference Paper

Yield and growth features of Panicum maximum (Jacq.) var Trichoglume cv Petrie (Green Panic) under woody cover, Chaco region, ArgentinaKUNST, C; LEDESMA, R; CASTANARES, M et al.Agroforestry systems. 2014, Vol 88, Num 1, pp 157-171, issn 0167-4366, 15 p.Article

Analysis of HALO implant influence on the self-heating and self-heating ennhanced impact ionization on 0.13 μm floating-body partially-depleted SOI MOSFET at low temperaturePAVANELLO, M. A; MARTINO, J. A; SIMOEN, E et al.Proceedings - Electrochemical Society. 2003, pp 389-394, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Radiation damage in deep submicron partially depleted SOI CMOSSIMOEN, E; RAFI, J. M; MERCHA, A et al.Proceedings - Electrochemical Society. 2003, pp 437-442, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Low temperature operation of 0.13 μm Partially-Depleted SOI nMOSFETs with floating bodyPAVANELLO, M. A; MARTINO, J. A; MERCHA, A et al.Journal de physique. IV. 2002, Vol 94, pp 3.31-3.34, issn 1155-4339Conference Paper